Part Number : K2996

Function :  10A, 600V, MOSFET, Transistor

Package : TO-220 Type

Maker : Toshiba

Pinouts :
K2996 datasheet

Description :

Silicon N Channel MOS Type Field Effect Transistor

Features : 

1. Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 6.8 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A

4. Drain Power Dissipation : Pd = 45 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C


Applications :

DC−DC Converter, Relay Drive and Motor Drive  


Datasheet PDF Download :
K2996 pdf

Others datasheet of same file : 2SK2996

2021/10/04 12:58 2021/10/04 12:58

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