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PDF K2996 Download

Toshiba
2SK2996
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220NIS
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Description

:

Silicon N Channel MOSFET

Features : 

1. Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 6.8 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A 

4. Drain Power Dissipation : Pc = 45 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C



Applications : 

1. High Speed, High Voltage Switching

2. DC−DC Converter, Relay Drive and Motor Drive 

 



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