Description:Silicon N Channel MOSFET Features : 1. Low drain−source ON resistance : RDS(ON) = 0.74 Ω(typ.) Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 600 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 10 A 4. Drain Power Dissipation : Pc = 45 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C Applications : 1. High Speed, High Voltage Switching 2. DC−DC Converter, Relay Drive and Motor Drive
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Related Part Number |
K2996 | K2985 K2983 | K2959 K2957 | K2956 |