Part Number : K2545

Function : 600V, 6A, N-Ch, MOSFET, Transistor

Package : TO-220 Type

Maker : Toshiba

Pinouts :
K2545 datasheet

Description :

Silicon N Channel MOSFET

Features : 

1. Low drain−source ON resistance  : RDS (ON)= 0.9 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 5.5 S (typ.)

3. Low leakage current  : IDSS= 100 µA (max) (VDS= 600 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 6 A

4. Allowable Power Dissipation : Pd = 40 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications : 

DC−DC Converter, Relay Drive and Motor Drive  


Datasheet PDF Download :
K2545 pdf

Others datasheet of same file : 2SK2545

 



PDF Download

2021/05/07 20:12 2021/05/07 20:12

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