K2545 PDF Datasheet

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Description

:

Silicon N Channel MOSFET

Features :

1. Low drain−source ON resistance : RDS (ON)= 0.9 Ω(typ.)

2. High forward transfer admittance : |Yfs| = 5.5 S (typ.)

3. Low leakage current : IDSS= 100 µA (max) (VDS= 600 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 6 A

4. Allowable Power Dissipation : Pd = 40 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

DC−DC Converter, Relay Drive and Motor Drive