Part Number : K13A60D
Function : 600V, N-Ch, MOSFET
Package : TO-220 Type
Maker : Toshiba
Pinouts : 
Description :
Power MOSFET (N-ch 600V )
• Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Applications : Switching Regulator
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 13 A
4. Channel dissipation : Pd = 50 W
5. Avalanche energy : Ear = 5 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : K13A600, TK13A60D
