Description:Power MOSFET (N-ch 600V ) • Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 13 A
4. Channel dissipation : Pd = 50 W
5. Avalanche energy : Ear = 5 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C
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Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |