Part Number : CS2N60F
Function : 2A, 600V, Silicon N-Channel Power MOSFET / VDMOSFET
Package : TO-220F Type
Maker : Huajing Discrete Devices
Pinouts : 
Description :
CS2N60F, the silicon N-channel Enhanced VDMOSFET s, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy .
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features
1. Fast Switching
2. Low ON Resistance(Rdson≤4.5Ω)
3. Low Gate Charge (Typical Data:8.5nC)
4. Low Reverse transfer capacitances(Typical:5.4pF)
5. 100% Single Pulse avalanche energy Test
Datasheet PDF Download :
Others datasheet of same file : CS2N60, CS2N60FA9H