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Description

CS2N60F, the silicon N-channel Enhanced VDMOSFET s, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance  the avalanche energy . 

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. 

The package form is TO-220F, which accords with the RoHS standard.

Features

1. Fast Switching

2. Low ON Resistance(Rdson≤4.5Ω)

3. Low Gate Charge (Typical Data:8.5nC)

4. Low Reverse transfer capacitances(Typical:5.4pF)

5. 100% Single Pulse avalanche energy Test