Part Number : BLH3355
Function : NPN EPITAXIAL SILICON RF TRANSISTOR CHIP
Maker : ShangHai Belling ( http://www.belling.com.cn/ )
Pinouts : 
Description :
NPN epitaxial silicon RF transistor for microwave low-noise amplification
Planar type
Electrodes: Aluminum alloy
Backside metal: Au alloy
Chip size: 370µm ×370µm
Chip thickness: 220±20µm.
Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
VCBO Collector to Base Voltage : 20 V
VCEO Collector to Emitter Voltage : 12 V
VEBO Emitter to Base Voltage : 3.0 V
IC Collector Current : 100 mA
Ptot Total Power Dissipation : 200 mW
Tj Junction Temperature : 150 °C
Tstg Storage Temperature : −65 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : BLH-3355
