NPN epitaxial silicon RF transistor for microwave low-noise amplification
Planar type Electrodes: Aluminum alloy Backside metal: Au alloy
Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
VCBO Collector to Base Voltage : 20 V VCEO Collector to Emitter Voltage : 12 V VEBO Emitter to Base Voltage : 3.0 V IC Collector Current : 100 mA Ptot Total Power Dissipation : 200 mW Tj Junction Temperature : 150 °C Tstg Storage Temperature : −65 to +150 °C