Part Number : 30F122
Function : 300V, 120A, N-Channel IGBT (Insulated Gate Bipolar Transistor)
Package : TO-220SIS Type
Maker : Toshiba
Image : 
Description :
Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structures a PNP bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation.
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