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Texas Instruments
MSP430F122IPW
8 MHz MCU with 4KB Flash, 256B SRAM, timer, comparator, SPI/UART 28-TSSOP -40 to 85
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Description

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Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structures a PNP bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation.

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