Description:Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structures a PNP bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. |
Related Part Number |
30TPS12 | 30KPA75CA 30KPA33CA-B | 30KP43A 30J124 | 30G124 |