Part Number : 2N6029
Function : PNP, COMPLEMENTARY SILICON POWER TRANSISTOR
Package : TO-3 Type
Maker : Central Semiconductor
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Description :
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 100 V
2. Collector to Emitter Voltage : Vceo = 100 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 16 A
5. Total Dissipation : Pc = 200 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
Datasheet PDF Download : 
Others datasheet of same file : 2N5629, 2N5630, N6029, 2N6030
