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Description

The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 100 V

2. Collector to Emitter Voltage : Vceo = 100 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 16 A

5. Total Dissipation : Pc = 200 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C