Part Number : 1N5818
Function : 30V, 1.0 A Schottky Rectifier, Diode
Package : Axial Lead Type
Maker : ON Semiconductor
Pinouts : 
Description :
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
1. Extremely Low VF
2. Low Stored Charge, Majority Carrier Conduction
3. Low Power Loss/High Efficiency
4. These are Pb−Free Devices*
Mechanical Characteristics:
1. Case: Epoxy, Molded
2. Weight: 0.4 Gram (Approximately)
3. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
4. Lead Temperature for Soldering Purposes
Official Site : http://www.onsemi.com/PowerSolutions/product.do?id=1N5818
Datasheet PDF Download :
Others datasheet of same file : 1N5817, IN5818, 1N5819
