Part Number : RJP6065DPM
Function : Silicon N Channel IGBT
Package : TO-3PFM Type
Maker : Renesas Electronics
Image : 
Description :
1. Low collector to emitter saturation voltage
VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)
2. Gate to emitter voltage rating 30 V
3. Pb-free lead plating and chip bonding
Pinouts :
High Speed Power Switching
Datasheet PDF Download :
Others datasheet of same file : RJP6065, RJP6065-DPM
