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Description

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ

3. High speed switching tr = 90 ns typ, tf = 250 ns typ

4. Low leak current ICES= 1 uA max

5. Isolated package TO-220FL

Applications : 

1. High Speed Power Switching