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Description

Partnumber : RJP30H2A

Function : 360V, 35A, IGBT, Transistor

Package : TO-263

Manufacturers : RENESAS

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Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES = 1 µA max



Absolute maximum ratings ( Ta=25°C )

1. Type of IGBT Channel : N-Channel  

2. Maximum Power Dissipation (Pc), W: 60  

3. Maximum Collector-Emitter Voltage |Vce|, V: 360  

4. Collector-Emitter saturation Voltage |Vcesat|, V: 1.9  

5. Maximum Gate-Emitter Voltage |Veg|, V: 30  

6. Maximum Collector Current |Ic|, A: 35  

7. Maximum Junction Temperature (Tj), °C: 150  

8. Maximum Collector Capacity (Cc), pF: 60