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Renesas
RJK5012DPP-A0#T2
Renesas 500V - 12A - MOS FET High Speed Power Switching
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Description

:

1. Low on-resistance 

2. Low leakage current

3. High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 12 A

4. Channel dissipation : Pch = 30 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C



Applications :

High Speed Power Switching



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