600V / 40A / IGBT
Features
1. Low collector to emitter saturation voltage VCE(sat)= 1.37 V typ. (IC= 40 A, VGE= 15 V, Ta = 25°C)2. Built in fast recovery diode in one package3. Trench gate and thin wafer technology4. High speed switching tr= 85 ns typ.
Applications :
High Speed Power Switching