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Description

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr =80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4.  High speed power switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 360 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 30 A

4. Channel dissipation : Pch = 20 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C