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Description

The K3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features : 

1. Low on-state resistance : RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)

2. Low Ciss: Ciss = 2050 pF TYP.

3.  5 V drive available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 25 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID =  64 A

4. Power Dissipation : Pd = 1 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C