K330 PDF Datasheet

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Description

:

Silicon N Channel MOS Type Field Effect Transistor

Features :

1. High breakdown voltage: VGDS= −50 V

2. High input impedance: IGSS= −1nA (max) (VGS= −30 V)

3. Low RDS (ON): RDS (ON)= 320 Ω(typ.) (IDSS= 5 mA)

4. Complementary to 2SJ105

5. Small package

Absolute Maximum Ratings (Ta = 25°C)

1. Gate-drain voltage VGDS : -50 V

2. Gate current : IG = 10 mA

3. Drain power dissipation :PD = 200 mW

4. Junction temperature :Tj =125 °C

5. Storage temperature range :Tstg = - 55~125 °C