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PDF K3298 Download

NEC
2SK3298
Power Field-Effect Transistor, 7.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

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Description

:

The K3298 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter..

Pinouts : 

Features

1. Low gate charge : QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)

2. Gate voltage rating : ±30 V

3. Low on-state resistance : RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 4.0 A)

4. Avalanche capability ratings

 


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Related Part Number


K3919  |  K3918  

K3878  |  K3683  

K3570  |  K3569  


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