PDF K3155 Download

Description

•  Low on-resistance :  RDS= 100 mΩtyp.

•  High speed switching

•  4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 150 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 15 A

4. Channel dissipation : Pch = 30 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applicatins :

High Speed Power Switching