Description:Silicon N Channel Juction Type FET Applications : 1. Low Noise Pre-Amplifier, Tone Control Amplifier And DC-AC 2. High Input Impedance Amplifier Circuit Applicatins.
Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = - 50 V 2. Drain current : ID = 10 mA 3. Drain Power Dissipation : Pd = 4. Juction temperature : Tch = 125 °C 5. Storage temperature : Tstg = -55 to +125 °C |
Related Part Number |
K3919 | K3918 K3878 | K3683 K3570 | K3569 |