Part Number : W8NB90
Function : MOSFET, N-Channel, 900V, 8A, Transistor
Package : TO-247 type
Maker : STMicroelectronics
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on)per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 8 A
4. Total Power Dissipation : Pd = 200 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = - 65 to +150 °C
1. HIGH CURRENT, HIGH SPEED SWITCHINGs
2. SWITH MODE POWER SUPPLIES (SMPS)s
3. DC-AC CONVERTERS FOR WELDINGEQUIPMENT