Part Number : RJP30H1DPD

Function : N-Channel Power MOSFET

Package: TO-263 Type

Maker : Renesas Electronics

Pinouts :
RJP30H1DPD datasheet

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

 


Datasheet PDF Download :
RJP30H1DPD pdf

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2021/07/20 14:42 2021/07/20 14:42

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