Part Number : RJP30H1DPD
Function : N-Channel Power MOSFET
Package: TO-263 Type
Maker : Renesas Electronics
Pinouts : 
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. Low leak current: ICES= 1 A max.
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