Part Number : NE32484A-SL
Marking : T
Function : ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Maker : NEC , Renesas Technology
Pinouts : 
Description :
The NE32484A, NE32484A-SL is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
Features :
• Super Low Noise Figure & High Associated Gain
(1) NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg ≤ 0.25 μm
• Gate Width : Wg = 200 μm
Datasheet PDF Download : 
Others datasheet of same file :
NE32484A, NE32484-ASL, NE32484A-T1, NE32484A-T1A
