Part Number : MMZ09312BT1
Function : Heterojunction Bipolar Transistor Technology (InGaP HBT)
Package : QFN 3x3 Type
Maker : Freescale Semiconductor
Pinouts : 
Description :
The MMZ09312BT1 is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage infemtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package.
Features
• Frequency: 400--1000 MHz
• P1dB: 29.6 dBm @ 900 MHz
• Power Gain: 31.7 dB @ 900 MHz
• OIP3: 42 dBm @ 900 MHz
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Performs Well with Digital Predistortion Systems
Datasheet PDF Download :
Others datasheet of same file : MMZ09312BT
