Part Number : K4A60DA
Function : Field Effect Transistor Silicon N Channel MOSFET
Package : TO-220 Type
Maker : Toshiba
Pinouts : 
Description :
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 2.2 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
• Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 3.5 A
4. Allowable Power Dissipation : Pd = 35 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : K4A600A, TK4A60DA