Part Number : FQPF20N06
Function : N-Channel QFET MOSFET
Package : TO-220F Type
Maker : Fairchild Semiconductor
Pinouts : 
Description :
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features :
• 15 A, 60 V, RDS(on)= 60 mΩ(Max.) @ VGS= 10 V, ID= 7.5 A
• Low Gate Charge (Typ. 11.5 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 25 V
3. Drain current : ID = 15 A
4. Power Dissipation : Pd = 30 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download : 
Others datasheet of same file : 20N06, FQPF-20N06
