Part Number : FQP10N60C

Function : 600V, 9.5A, N-Channel QFET MOSFET

Package : TO-220 Type

Maker : Fairchild Semiconductor

Image :
FQP10N60C datasheet

Description :

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

• 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A

• Low Gate Charge (Typ. 44 nC)

• Low Crss (Typ. 18 pF)

• 100% Avalanche Tested

Datasheet PDF Download :
FQP10N60C pdf

Others datasheet of same file : 10N60, 10N60C, FQP10N60, FQPF10N60C



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2021/07/05 12:25 2021/07/05 12:25

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