Part Number : F530NS

Function : 100V, 17A, MOSFET, Transistor

Package : TO-263

Maker : International Rectifier

Image :
F530NS datasheet

Description :

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on esistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

Datasheet PDF Download :
F530NS pdf

Others datasheet of same file : F530NL, F530N, IRF530NSTRLPBF

2021/05/26 14:57 2021/05/26 14:57