Part Number : F530NS
Function : 100V, 17A, MOSFET, Transistor
Package : TO-263
Maker : International Rectifier
Image : 
Description :
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on esistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
Datasheet PDF Download : 
Others datasheet of same file : F530NL, F530N, IRF530NSTRLPBF