Part Number : BSS123
Function : 100V, 0.17A, N-CHANNEL ENHANCEMENT MODE MOSFET
Package : SOT-23 Type
Maker : Diodes Incorporated.
Pinouts : 
Description :
These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These productshave been designed to minimizon-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltagelow current applications such as:
Features and Benefits
1. Low Gate Threshold Voltage
2. Low Input Capacitance
3. Fast Switching Speed
4. Low Input/Output Leakage
5. High Drain-Source Voltage Rating
6. Totally Lead-Free & Fully RoHS Compliant
7. Halogen and Antimony Free. “Green” Device
8. Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
1. Case : SOT23
2. Case Material : Molded Plastic. UL Flammability Classification Rating 94V-0
3. Moisture Sensitivity : Level 1 per J-STD-020
Datasheet PDF Download : 
Others datasheet of same file :
BSS123-7-F, BSS123Q-13, BSS123Q-7
