Part Number : 30J124

Function : 600V, 200A, Discrete IGBT

Package : TO-220SIS Type

Maker : Toshiba

Pinouts :
30J124 datasheet

Description :

Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.

Datasheet PDF Download :
30J124 pdf

Others datasheet of same file : GT60M303A

2021/07/17 17:32 2021/07/17 17:32