Part Number : 30J124
Function : 600V, 200A, Discrete IGBT
Package : TO-220SIS Type
Maker : Toshiba
Pinouts :
Description :
Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
Datasheet PDF Download :
Others datasheet of same file : GT60M303A
