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Description

The SD1127 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted on a beryllia pill to isolate the collector lead and ground the emitter lead for high gain performance

Features

· 175 MHz
· 12.5 VOLTS
· POUT= 4.0 W MINIMUM
· GP = 12.0 dB
· GROUNDED EMITTER

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 36 V

2. Collector to Emitter Voltage : Vceo = 18 V

3. Emitter to Base Voltage : Vebo = 4 V

4. Collector Current : Ic = 0.64 A

5. Total Dissipation : Pc = 8 W

6. Junction Temperature : Tj = 200°C

7. Storage Temperatue : Tsg = -65 ~ +200°C