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Description

Using the SchottkyBarrier principle with a Molybdenum barrier metal.

These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

Features

1. LowForward Voltage.

2. LowSwitching noise.

3. High Current Capacity

4. Guarantee Reverse Avalanche.

5. Guard-Ring for Stress Protection. 

6. LowPower Loss & High efficiency.

7. 150 °C Operating Junction Temperature

8. LowStored Charge MajorityCarrier Conduction.
 

9. Plastic Material used Carries Underwriters Laboratory