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MMBTA13LT1G
Bipolar Transistors (BJT); MMBTA13LT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 300 mA
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Description

:

Ideal for medium power application and switching

Features

•  Epitaxial Planar Die Construction
•  Complementary PNP Types Available (MMBTA63/MMBTA64)
•  Ideal for Medium Power Amplification and Switching
•  High Current Gain
•  Lead, Halogen and Antimony Free, RoHS Compliant"Green" Device
•  Qualified to AEC-Q101 Standards for High Reliability

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 30 V

2. Collector to Emitter Voltage : Vceo = 30 V

3. Emitter to Base Voltage : Vebo = 10 V

4. Collector Current : Ic = 300 mA

5. Power Dissipation : Pd = 300 mW

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C



Mechanical Data

•  Case: SOT-23
•  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
•  Moisture Sensitivity: Level 1 per J-STD-020D
•  Terminal Connections: See Diagram
•  Terminals: Solderable per MIL-STD-202, Method 208
•  Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
•  MMBTA13 Marking (See Page 3): K2D, K3D
•  MMBTA14 Marking (See Page 3): K3D
•  Weight: 0.008 grams (approximate)



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