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Description

This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switchapplications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achievelow on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°Coperating junction temperature and high repetitive peak current capability. These features combine tomake this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Features

1. Advanced process technology
2. Key parameters optimized for PDP Sustain & Energy Recovery applications
3. Low EPULSE rating to reduce the power dissipation in Sustain & ER applications
4. Low QG for fast response
5. High repetitive peak current capability for reliable operation
6. Short fall & rise times for fast switching