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IRF7413ZTRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 8 Milliohms; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V

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Description

1. Advanced Power MOSFET Technology
2. Ultra Low On-Resistance
3. N-Channel Mosfet
4. Surface Mount
5. Available in Tape & Reel
6. Dynamic dv/dt Rating
7. Fast Switching

Description

This N- channel MOSFET is produced using International Rectifier's advanced HEXFET
power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications

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Related Part Number

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