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IRF530NSTRLPBF
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 90MILLIOHMS; Id 17A; D2PAK; Pd 70W; Vgs +/-20V

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Description

: 

22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET

 

Features

• Ultra Low On-Resistance -rDS(ON)= 0.064Ω, VGS = 10V

• Simulation Models
- Temperature Compensated PSPICE™ and SABER©Electrical Models
- Spice and SABER©Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 100 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 22 A

4. Power Dissipation : Pd = 85 W

5. Channel temperature : Tch =  175 °C

6. Storage temperature : Tstg = -55 to +175 °C

 


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