Description:The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
1. Repetitive Avalanche Ratings 2. Dynamic dv/dt Rating 3. Hermetically Sealed 4. Simple Drive Requirements 5. Ease of Paralleling |
Related Part Number |
IRS29831 | IRS2153 IRS2101 | IRS2092 IRM-3638F13 | IRLR024N |