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Description

D5032 is high breakdown voltage of NPNbipolar transistor. (Jilin Sino-microelectronics co., Ltd)

The main process of manufacture:
high voltage mesa type process, riple diffused process etc, adoption of fully plastic packge.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 600 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C