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Description

1. Process GLASS PASSIVATED MESA

2. Die Size 57 x 57 MILS

3. Die Thickness 8.7 MILS ± 0.6 MILS

4. Cathode Bonding Pad Area 24 x 14 MILS

5. Gate Bonding Pad Area 7.9 x 7.9 MILS

6. Top Side Metalization Al - 45,000Å

7. Back Side Metalization Al/Mo/Ni/Ag - 32,000Å