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Description

Silicon NPN triple diffusion mesa type Transistor

Features

• High breakdown voltage: VCBO ≥ 1700 V
• Wide safe operation area
• Built-in dumper diode

Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1700 V

2. Collector to Emitter Voltage : Vceo = 1700 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 9 A

5. Total Dissipation : Pc =3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. Horizontal deflection output for TV