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PDF C5299 Download

TE Connectivity / Raychem
C52996-000
Circular MIL Spec Strain Reliefs & Adapters TX54AB00-2424
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Description

:

NPN triple diffused planar silicon transistor

Features : 

1. High speed : tf =100ns typ.

2. High breakdown voltage : VCBO=1500V.

3. High reliability (Adoption of HVP process).

4. Adoption of MBIT process.

Pinouts : 




Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 10 A

5. Total Dissipation : Pc = 3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C




Application :

Ultrahigh-deflection CTR display horizontal deflection output 



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