Description:NPN triple diffused planar silicon transistor Features : 1. High speed : tf =100ns typ.
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 1500 V 2. Collector to Emitter Voltage : Vceo = 800 V 3. Emitter to Base Voltage : Vebo = 6 V 4. Collector Current : Ic = 10 A 5. Total Dissipation : Pc = 3 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
Ultrahigh-deflection CTR display horizontal deflection output |
Related Part Number |
C5902 | C5801 C5763 | C5508 C5440 | C5386 |