NPN Triple Diffused Planar Silicon Transistor
Features :
1. High speed : tf=100ns typ. 2. High breakdown voltage : VCBO=1500V. 3. High reliability (Adoption of HVP process). 4. Adoption of MBIT process. 5. On-chip damper diode.
Test Circuit
Applications :1. Ultrahigh-Definition CRT Display Horizontal Deflection Output