Description:NPN EPITAXIAL SILICON TRANSISTOR Features : • Low Current Consumption and High Gain Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 5 V 2. Collector to Emitter Voltage : Vceo = 3 V 3. Emitter to Base Voltage : Vebo = 2 V 4. Collector Current : Ic = 10 mA 5. Total Dissipation : Pc = 30 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -65 ~ +150°C
Description:NPN EPITAXIAL SILICON TRANSISTOR Features : • Low Current Consumption and High Gain Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 5 V 2. Collector to Emitter Voltage : Vceo = 3 V 3. Emitter to Base Voltage : Vebo = 2 V 4. Collector Current : Ic = 10 mA 5. Total Dissipation : Pc = 30 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -65 ~ +150°C
|
Related Part Number |
C5902 | C5801 C5763 | C5508 C5440 | C5386 |