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PDF C5177 Download

Eaton / Cutler Hammer
83C5177G04
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Description

:

NPN EPITAXIAL SILICON TRANSISTOR 

Features : 

• Low Current Consumption and High Gain

• Mini-Mold package EIAJ: SC-59

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 5 V

2. Collector to Emitter Voltage : Vceo = 3 V

3. Emitter to Base Voltage : Vebo = 2 V 

4. Collector Current : Ic = 10 mA

5. Total Dissipation : Pc = 30 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C



Applications


• LOW-NOISE MICROWAVE 


Description

:

NPN EPITAXIAL SILICON TRANSISTOR 

Features : 

• Low Current Consumption and High Gain

• Mini-Mold package EIAJ: SC-59

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 5 V

2. Collector to Emitter Voltage : Vceo = 3 V

3. Emitter to Base Voltage : Vebo = 2 V 

4. Collector Current : Ic = 10 mA

5. Total Dissipation : Pc = 30 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C



Applications


• LOW-NOISE MICROWAVE 



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Related Part Number


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