C4860 PDF Datasheet

Description

:

NPN epitaxial planar silicon transistor

Features :

1. High cutoff frequency : fT=6.5GHz typ.

2. High gain : | S21e | 2 =11.5dB typ (f=1GHz).

3. Small Cob : NF=0.65pF typ.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 20 V

2. Collector to Emitter Voltage : Vceo = 10 V

3. Emitter to Base Voltage : Vebo = 2 V

4. Collector Current : Ic = 30 mA

5. Total Dissipation : Pc = 150 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C